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The stress investigation on through-silicon vias (TSVs) is important for 3D IC development. This work summarizes the stress measurement and modeling results for TSVs based on the use of micro-Raman spectroscopy, which can be used to determine the material, process and design of TSVs. More importantly, this study can provide an important guideline for the reliability analysis of the TSV-based 3D IC.
A TSV (Through Silicon Via) structure with I-shaped structure for 3D packaging is proposed in this paper. Based on the notching effect and gradient etching process of DRIB, this kind of structure can be fabricated in the existed facilities, without additional processes and equipments. According to microwave transmission line theory and by using finite element full-wave analysis tool, simulation of...
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