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Three dimensional through-silicon via (3D TSV) technology emerges due to the requirement of high performance, low cost and small form factor in the three dimensional packaging technology. The typical TSV structure is a thin silicon wafer drilled with through hole, the inside wall of the hole is plated with dielectric SiO2 and diffusion barrier such as Ta, and then the hole is filled by Cu or W as...
The stress investigation on through-silicon vias (TSVs) is important for 3D IC development. This work summarizes the stress measurement and modeling results for TSVs based on the use of micro-Raman spectroscopy, which can be used to determine the material, process and design of TSVs. More importantly, this study can provide an important guideline for the reliability analysis of the TSV-based 3D IC.
Continuous increase in demand for product miniaturization, high package density, high performance and integration of different functional chips has lead to the development of three dimensional packaging technologies. Face-to-face silicon (Si) dies stacking is one of the three dimensional (3D) packaging technologies to form a high density module. In this work, a chip level stacked module was demonstrated...
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