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Indium oxide (In2O3) films were directly grown on (0001)-plane sapphire substrates by atomic layer deposition (ALD) using tri-methyl-indium (TMIn) and nitrous oxide (N2O). The structural, optical and transport properties of the In2O3 films were characterized by ??-to-2?? x-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), Hall measurements, and transmission spectroscopy...
Multilayer oxide thin film stacks of aluminum doped zinc oxide (AZO) and tin doped indium oxide (ITO) have been sequentially deposited on soda lime glass substrates by RF sputtering of AZO and ITO ceramic targets at a substrate temperature of 150??C. The ratio of the AZO thickness to the ITO thickness is varied while keeping the total thickness of the stack constant. The electrical and optical properties...
The precursor Zn3N2 films were deposited on quartz glass substrates by reactive DC magnetron sputtering and oxidized in situ at various temperatures by introducing pure oxygen gas directly into the deposition chamber. X-ray diffraction (XRD), scanning electron microscopy (SEM), UVNIS transmittance, Hall-effect measurements and photoluminescence (PL) were carried out to investigate the structural,...
Indium tin oxide (ITO) films were deposited at room temperature with no oxygen flow on glass substrates by RF magnetron sputtering. The effects of sputtering power and argon ambient pressure were investigated. The morphology, structural and optical properties of ITO films were examined and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS transmission spectroscopy...
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