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Sapphire is known as the most commonly used substrate, and it is widely used as the substrate for the growth of GaN films. In this paper, Sapphire substrate is pretreated by melted KOH solution, in which the triangle patterned etched pits are formed, and the interpretation is theoretically given about the triangle shape. In additional, compared the results which are obtained when the etched temperature...
Production of GaN films by metal-organic chemical vapor deposition (MOCVD) is widely used way of the world. MOCVD production in China the concept and production equipment still have a gap with the international, so do not have the advantage of international competition. This article describes some results of GaN film grown on sapphire by MOCVD in recent year. author will discuss those results base...
High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) on low temperature GaN (LT-GaN) nucleation layers deposited by HVPE. The (0001) sapphire substrates were used. The LT-GaN process parameters were as follows: HCl flow rate was 10 sccm/min, temperature 450degC and deposition time intervals 7 and 9 minutes for sample #1 and #2, respectively. The values...
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