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Sapphire is known as the most commonly used substrate, and it is widely used as the substrate for the growth of GaN films. In this paper, Sapphire substrate is pretreated by melted KOH solution, in which the triangle patterned etched pits are formed, and the interpretation is theoretically given about the triangle shape. In additional, compared the results which are obtained when the etched temperature...
Low-temperature gallium nitride buffer layers (LT-GaN) deposition preceded growth of high temperature gallium nitride (HT-GaN) thick layers. Buffers and thick layers were deposited on (0001) sapphire substrates by Hydride Vapor Phase Epitaxy (HVPE). Before nucleation layer deposition sapphire substrates were chemically and thermally treated in various ways. Substrate surface morphology was examined...
The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al2O3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to find the best experimental conditions for obtain c-GaN films with good properties.
High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) on low temperature GaN (LT-GaN) nucleation layers deposited by HVPE. The (0001) sapphire substrates were used. The LT-GaN process parameters were as follows: HCl flow rate was 10 sccm/min, temperature 450degC and deposition time intervals 7 and 9 minutes for sample #1 and #2, respectively. The values...
High temperature gallium nitride (HT-GaN) layers were grown by HVPE (hydride vapor phase epitaxy) method on low temperature GaN (LT-GaN) buffer layers deposited by HVPE or MOVPE method and on double MOVPE LT-GaN/AIN buffers. The (0001) sapphire substrates were applied. The HCl flow rate and deposition time intervals of nucleation layer deposition were varied in the range of 8-10 ml/min and 5-9 min...
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