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Wafer level accelerated testing is a key tool to perform fast reliability assessment of new technologies. This paper presents an innovative methodology developed to perform accurate life-time extrapolation of 3-dimensional (3D) high density capacitors through constant electric field stress (CES) test. This methodology is first based on dielectric thickness extraction from planar capacitor measurements...
Using poly-Si gate MOS capacitors, the tunnel oxide degradation due to high electric field stress is shown to be accelerated by the oxidation of the Si/sub 3/N/sub 4/ film in inter-poly ONO films and by high-temperature annealing. Microscopic Raman spectroscopy confirms that increased tensile stress in poly-Si gates leads to tunnel oxide degradation, Therefore, using CVD-SiO/sub 2/ film as the top...
This paper investigates the physics of voltage and temperature accelerated breakdown testing of silicon dioxide within the framework of an anode hole injection model which can predict low voltage (3.3 V and below) breakdown lifetime. The field acceleration rate is shown to be independent of temperature, while the reduction of oxide breakdown lifetime at increased temperature is due to the oxide's...
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