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Pulsed non-melt laser annealing (NLA) has been used to modify the near surface defect and related junction properties in the ClGS solar cells. CIGS films deposited on Mo/glass substrates were annealed by using a 248 nm line Kr excimer laser at selected laser energy densities and pulse number, and characterized by the dual beam optical modulation (DBOM), XRD, SEM, and Hall effect measurements. In addition,...
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