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The authors report a novel technique for measuring the density distribution of the D/sup 0/-/ state in a-Si:H before and after light soaking and in a-SiGe:H,F alloys for solar cells. Electron time-of-flight (TOF) measurements as a function of temperature form the basis of this technique. The deep trapping of electrons controls the mobility-lifetime product ( mu tau )/sub n/, which is evaluated from...
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