The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Static random access memories with six and seven transistor cells that maintain full static noise margin during read operation and reside in low leakage voltage collapsed state when unselected are presented. The memory test circuits are fabricated on a 0.13 mum CMOS process technology. The cells are 11% larger than a conventional SRAM cell drawn to the same design rules. Measured test results verify...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.