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Electrostatic discharge (ESD) endurance ability of InGaN blue light-emitting diodes is significantly improved when antiparallel Ga- and N-polar domains coexist within the p-type GaN-layer region. The inversion of Ga to N polarity in this region, which is verified using convergent-beam electron diffraction, was induced by the stress accumulated in the underlying layers. A typical p-type GaN layer,...
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