The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel. The...
The electrical properties of InxGa1-xAs (x=0.53, x=0.65) MOSFETs have been studied for three different ex-situ surface passivation techniques (HF clean, (NH4)2S clean and PECVD a-Si interlayer) with HfO2 gate dielectric (4 nm and 8 nm) and Ni/Au gate metal. In0.65Ga0.35As devices demonstrate much higher drive current than In0.53Ga0.47As devices. Devices with an a-Si IPL exhibit the highest drive current...
The temperature dependence of ring-oscillator delay of high-kappa /metal-gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.