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The 1/f noise and reliability of SiGe-channel pMOSFETs with a highly compressive contact-etching stop-layer (CESL) interlayer-dielectric-SiNx, stressing layer have been studied in this letter. The SiGe-channel devices with a highly compressive CESL layer have higher drain current and lower 1/f noise than the conventional SiGe-channel and bulk-Si devices. However, the device reliability is degraded...
Channel hot-carrier degradation presents a renewed interest in the last NMOS nodes where the device reliability of bulk silicon (core) 40 nm and Input/Output (IO) device is difficult to achieve at high temperature as a function of supply voltage VDD and back bias VBS. A three mode interface trap generation is proposed based on the energy acquisition involved in distinct interactions in all the VGS...
For the first time, the performance impact of (110) silicon substrates on high-k + metal gate strained 45 nm node NMOS and PMOS devices is presented. Record PMOS drive currents of 1.2 mA/um at 1.0 V and 100 nA/um Ioff are reported. It will be demonstrated that 2D short channel effects strongly mitigate the negative impact of (110) substrates on NMOS performance. Narrow width (110) device performance...
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