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The impact of FIB parameters on TEM sample preparation for the low-k dielectric values 2.7 in sub-65nm IC technology nodes is investigated. It is found that the condition of the ion beam and electron imaging has a strong effect on the profile of the low-k dielectric. Porous profile that enhanced by FIB was observed by TEM imaging. This phenomenon becomes more serious in the samples preparation by...
The metal void information is very important for engineers to monitor the stability of the process and equipment during mass production and process tuning. However, traditional methods (X-S and P-V) are not efficient for metal void inspection. Therefore, the novel methodology is developed in this paper to provide a time efficient sample preparation method and acceptable view region for plane-view...
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