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In this paper a BISR architecture for embedded memories is presented. The proposed scheme utilises a multiple bank cache-like memory for repairs. Statistical analysis is used for minimisation of the total resources required to achieve a very high fault coverage. Simulation results show that the proposed BISR scheme is characterised by high efficiency and low area overhead, even for high defect densities...
In this paper, we present a new technique to improve the reliability of H-tree SRAM memories. This technique deals with the SRAM power-bus monitoring by using built-in current sensor (BICS) circuits that detect abnormal current dissipation in the memory power-bus. This abnormal current is the result of a single-event upset (SEU) in the memory and it is generated during the inversion of the state of...
Built-in self test (BIST) and built-in self repair (BISR) techniques have been developed for memory blocks in recent years. Such techniques are suited to enhance production yield, but also to facilitate long-term dependable circuits though self repair in the field of application. BISR for logic circuits has shown to be much more complex, for which only a few approaches have been published so far....
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