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We present the first surface-potential based compact model for RF GaN HEMTs and benchmark our work against both numerical simulations and device measurements. It is expected that such an approach will be superior to other modeling techniques in terms of scalability and model performance for applications where accurate distortion modeling is of paramount importance.
In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, Ron(VDD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the Vdd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution...
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