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We have examined atomistic processes of hydrogen desorption from the H/Si(001) surface by scanning tunneling microscopy (STM). At a low hydrogen dose, Si atoms are etched from the suface and the patched pattern of 2 1 and 1 2, where each step edge penetrates into neighboring steps, is observed. On the other hand, a quasi-stable c(4 4) surface reconstruction is observed for high doses of hydrogen...
Molecular beam homoepitaxy on H terminated Si(111)-(1 1) surfaces has been studied by high resolution low energy electron diffraction (LEED). Exponentially decaying LEED intensity oscillations reflect the formation of an increasingly rough growth front during Si deposition. For temperatures below 480°C bulk defects are generated which finally lead to non crystalline films. The strong influence of...
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