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This letter presents a high-performance N-polar AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor grown by metal-organic chemical vapor deposition on sapphire substrate. The devices were passivated with SixNy deposited by plasma-enhanced CVD and consisted of a gate structure recessed through the SixNy passivation, with integrated slant field plates, to prevent dc to RF dispersion...
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