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The scaling roadmap of devices under a “more than Moore” scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application such as in memories and neuromorphic computing chips. However, memristive devices still face some challenges to be resolved before becoming a mainstream. This work analyzes the...
The demand for highly scalable and low power memory has led to research in emerging technologies and devices. Among these devices, memristors has attracted increased attention as being a promising storage device. However, due to its nano-scale size it faces various types of reliability issues. In this study, we have reviewed the memristive mechanisms and reliability concerns existing in memristor...
Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performance of physical TiO2 and TaO2 nonvolatile memristive devices were compared in terms of switching speed, retention and endurance. TaO2 memristive devices have shown better endurance (108 times more switching cycles) and...
The impact of the recently discovered nanobattery effect on the switching, the endurance, and the retention of resistive random access memory devices is demonstrated. We show that the relaxation of the electromotive force voltage may lead to a shift of the resistance level for high resistive states, which is included into device modeling. Based on the extended memristive device model, which accounts...
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