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A 512 bits Phase Change Memory (PCM) embedded IP has been successfully achieved based on 0.18-µm CMOS process. The material of PCM is Ge2Sb2Te5. And the cell structure of PCM is 1R1T which can be compatible with CMOS process. The size of heat electrode is 90nm, while the standard electrode is 260nm, which can reduce the reset current. The full chip periphery circuit including read/write drive, decoder...
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