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Annular microvoids formed by neutron-induced single-event burnout (SEB) in Si power diodes were observed by a slice-and-view technique. The axial symmetry of damage region reflects the spatially isotropic thermal diffusion that occurred. Analytical formulas for the local rise in temperature during SEB were derived from the thermal diffusion equation. The local temperature was found to increase in...
Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.
We use infrared microscopy to image the temperature profile of graphene field-effect transistors operating at constant source to drain current bias. We find a peak in the temperature profile, i.e. a ??hot spot?? appears near the drain (anode) electrode of the graphene sheet at high current while operating in the hole-doped regime. We shift the hot spot position on the graphene sheet by tuning the...
This paper investigates the physics of 0.13 mum partially depleted SOI gated diodes through TLP measurements and TCAD simulations. The impact of gate length, well type, oxide thickness, gate to contact distance and presence of gate on ESD performance are evaluated and discussed. It is shown that the gate coupling effect decreases ESD performance.
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