The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we analyze the effects of single-chargetrapinduced random telegraphic noise (RTN) on asymmetricdual high-K spacer based FinFET (ADS-FinFET). The effectsof RTN reduces in proposed device because asymmetric high-K spacer reduces the electric field effect at source and formation of the barrier between source to gate/drain. The spacer width optimization will provide maximum possible performance...
A metal nitride-interlayer-semiconductor source/drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity ($\rho _{c}$ ) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n+-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.