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The emission and recombination characteristics of UV or blue light emission from InGaN/GaN quantum well (QW) structures influenced by V-shaped pits have been investigated by near-field and time-resolved photoluminescence measurements. Localization of charge carriers due to the potential barriers caused by the V-shaped pit formation is observed to be modified by thermal excitation. Temperature dependence...
In this paper, the surface micro hole array photonic crystal structures were fabricated on p-type GaN of InGaN/GaN through photolithography and ICP dry etching process. We designed three different patterns of circle hole arrays, including square lattice array, triangle lattice array, and honeycomb lattice array. The hole diameter was around 6 mum, and the period of the lattice array was about 15 mum...
Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. Furthermore,...
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