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The results of recent single event gate rupture and single event burnout testing on power MOSFETS are presented. The recent test data show a considerable drop in failure voltage in comparison to manufacturer data for device ratings over 130 V. The effect of range is considered to account for this difference. The methods and practices for testing and data analyses that need to be used for adequate...
We have investigated the effects of biased and unbiased X-ray irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of 130-nm MOSFETs irradiated up to 1Mrad(SiO2). We found a small but measurable increase in TDDB lifetime after irradiation at the worst-case irradiation bias. The influence of radiation bias on subsequent TDDB is more significant in the PMOSFETs than the NMOSFETs...
This paper describes several methodologies based on a pulsed laser beam to reveal the architecture of a high integrated SDRAM, and the different classes of Single Event Effects that can occur due to cosmic radiations. At cell level, laser is used to reveal an important technological parameter: the lithography process. At memory array level, laser is a powerful tool to retrieve cell physical arrangements,...
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