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The characterization of thin film GaAs/Si solar cells grown by low-temperature molecular beam epitaxy (MBE) is presented. With assistance of atomic hydrogen irradiation in MBE, a clear streak RHEED pattern and sharp PL spectra with FWHM of less than 10 meV at 77 K were obtained. It was found that GaAs/Si layers grown at low temperatures were strained, and were gradually relaxed with increasing layer...
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