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The scaling of the device, for the application of VLSI and ULSI technology, is necessary. For this purpose a novel model of DG MOSFET has already been designed, after that FinFET and nanowire techniques introduced. But to further improvement for the latest technologies, the CDSG MOSFET, a novel model has an advantage of the scaling. Using this CSDG MOSFET beyond 22 nm technology, the effect on the...
In Micro and Nano Technology, the downscaling of semiconductor devices requires the usage of alternative semiconductor material for SiO2 as the gate dielectric. It requires new structure so that the higher current can be achieved. In view of this, in the present paper a structure of double-gate MOSFET with HfO2 has been analysed. This paper includes an effect of threshold voltage on symmetric double-gate...
The Double-Gate MOSFET can be used to design the nanotechnology based switches at the range of Terahertz for transceiver processes. In this research, the switching frequency with the help of transconductance for Terahertz Double-Gate MOSFET has been analyzed. The switching transient has been observed with inclusion of currents. It will be suitable for the application of nanotechnology regime.
The present paper explores and analyses the performance of Carbon Nano Tube Field Effect Transistor (CNTFET) technology in analog domain through its application as a basic current mirror. 32nm channel length-single walled-one tube CNTFET technology has been assessed and compared with 45nm, 32nm and 22nm NMOS technologies through HSPICE simulations of current mirror circuitry. Different methods of...
Carbon nanotubes (CNTs) offer unique properties such as the highest current density, ballistic transport, ultrahigh thermal conductivity, and extremely high mechanical strength. Because of these remarkable properties, they have been expected for use as wiring materials and as alternate channel materials for extending complementary metal-oxide-semiconductor (CMOS) performance in future very large scale...
Quantum and high-field effects present in a nanoscale MOSFET are modeled and data processed using MATLAB. The drift response to the electric field is modeled after the intrinsic velocity that is shown to be the ultimate limit to the saturation velocity in a very high electric field. The ballistic intrinsic velocity arises from the fact that randomly oriented velocity vectors in zero electric field...
The following topics are dealt with: power systems; drives; biomedical signal; processing; communication systems; communication networks; semiconductor devices and; modelling; MOSFET; power electronics; microwave links and antennae; RFID tag antenna; thin film technology; power converters; electrooptical devices; lasers; solar cells.
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