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Magnetic properties and structure of FeN/AlN multilayered films deposited by r.f. magnetron sputtering were studied. Hc decreased as the ratio of FeN to AlN layer thickness became small. Hc also decreased with decreasing film thickness of FeN/AlN bilayers. Hc and 4??Ms in a 22??/11?? multilayered film were 1 Oe and 8.5 kG, respectively. The film had high permeability, ??', 800 at 5 MHz and 650 even...
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