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Lead Titanate (PbTiO3) thin films derived from metal alkoxide precursor solution through sol-gel method were deposited onto silicon substrates by dip coating. These films were deposited at different immersing times. The withdrawal speed on the other hand was fixed at 7 mm/s. The dielectric properties of these thin films were investigated as a function of frequency. The IV characteristics and micro-structural...
Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer...
Ferroelectric lead zirconium titanate (Pb (ZrxTi1-x) O3) thin films with various thicknesses were fabricated on Pt/Ti/SiO2/Si substrates using the sol-gel method with 2.45 GHz microwave energy. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the films. The thicknesses of PZT film were in the range of 99 to 420 nm, and films were...
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