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Transmission electron microscopy, Raman scattering, Fourier transform infrared spectroscopy, and radio-luminescence are employed to investigate rare-earth (RE) incorporation and aggregate formation in silica glasses prepared by the Sol-Gel method and doped with Ce3+, or Tb3+, Gd3+, Yb3+ with concentrations up to several mol%. The results demonstrate that rare-earth aggregates with a mean diameter...
This work studies the microscopic defects in oxynitride films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. X-ray photoelectron spectroscopy (XPS) study indicates that the silicon atoms in the films are randomly bonded with nitrogen and oxygen atoms. Photoluminescence measurements were conducted to study the radiative defect centers in the oxynitride films and found that...
A thin films of crystalline Silicon Carbide (c-SiC) and amorphous Silicon Carbide (a-Si1-xCx) were grown onto p-type Si substrate by using a hot target p-type polycrystalline 6H-SiC target by both methods: Pulsed Laser Deposition (PLD) with KrF excimer laser and sputtering DC magnetron with a mixture of gas Ar:H2, respectively. The target ldquo6H-SiCrdquo used to elaborate the thin films, is realized...
The effect of the nitrogen on the photoluminescence in silicon rich oxide films with different silicon excess and nitrogen content was studied. The materials were deposited by low pressure chemical vapor deposition (LPCVD) and nitrogen was introduced adding ammonia to the reactive gases. Some samples were annealed at 1100degC in nitrogen ambient. The films were characterized by Fourier transform infrared...
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