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The effect of boron and phosphorous doping and co-doping on the optical properties of silicon nanocrystals formed in fused-silica by ion implantation is being studied. Boron-phosphorus pairs in silicon nanocrystals are of interest for possible applications in optical quantum computing.
In this paper, we studied the electrical and optical properties of magnetic impurities and non-magnetic impurities of p-type InMnP:Zn co-doped with Zn by using electrical measurements such as capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and photo-induced current transient spectroscopy. In the InMnP:Zn used in this study, ion implantation to InP:Zn and post annealing methods...
We present a study on characterization and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900 nm spectral range. The active layer was produced by Si/sup +/ ion implantation into SiO/sub 2/. Si-ncs were precipitated by annealing at 1100 /spl deg/C, forming a 0.4 /spl mu/m thick core layer in the waveguide. The Si-nc density, size and visible emission and...
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