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Ellipsometric analysis of the buried graphitized layer formed in the He + -implanted and annealed diamond has been made. Spectroscopic ellipsometry data in the 360–1050nm range at the incident angles between 65° and 75° were fitted based on a three-layer structure model. Using optical spectroscopy, atomic force and white-light interferometry microscopy data the n and k spectra of graphitized...
Microstructural changes and annealing/graphitization processes induced by thermal annealing in vacuum at 200–1700°C and by irradiation of a KrF excimer laser are studied in deuterium-implanted (doses 0.5–12×10 16 cm −2 ) diamond single crystals and polycrystalline CVD diamonds. The specific features of D + implanted samples—low critical doses, island-type graphitization and...
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