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The fabrication of both n and p-type Si MOS capacitors using high k dielectric as insulator deposited by atomic layer deposition technique is presented. The interface obtained between the high k dielectric and the semiconductor substrate, critical for stability and feasibility of the experimental devices, is analyzed using both numerical calculation of the ideal capacitance — voltage (C-V) characteristics...
Low-voltage solution-processed organic thin-film transistors (OTFTs) were developed using a large permittivity (high-k) polymer P(VDF-TrFE-CFE). It was shown that by inserting a thin, low-polar dielectric layer (CYTOP) between the high-k one and the channel, the bias stability was much improved due to screening of the dipole field from high-k dielectric.
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