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This paper studies heated inductively driven rf-discharges using emission and absorption spectroscopy. The dependence on parameters such as pressure, heating temperature and amount of InBr in different background gases has been investigated. The measured spectra are compared to simulations of the InBr emission based on molecular constants, Franck-Condon factors and transition probabilities, providing...
Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. Furthermore,...
Record external quantum efficiency (99%) is obtained for a GaAs/InGaP heterostructure bonded to a dome lens at 100 K. This was measured using a differential luminescence thermometry technique with temperature resolution ~ 30 muK.
We demonstrate that longitudinal-optical phonons in type-II InAs/GaSb quantum wells can be used to up-convert photoluminescence. Such a phenomenon could be used to achieve laser-induced cooling of lattices.
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