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Halo implants with various tilt angles and energies were compared from the point of hot carrier reliability. Our study shows that a larger tilt or a deeper, more energetic halo implant leads to stronger reverse short channel effects and higher electric field in the extension/channel junction. However, the net impact of a sharper extension/channel junction on hot carrier degradation was found to be...
An anomalous behavior of nMOSFET's hot carrier reliability characteristics has been investigated at an elevated temperature for the first time. Although the degradation of linear drain current is significantly reduced with increasing stress temperature, the degradation of saturation drain current is enhanced for high temperature stress. This behavior can be explained by the reduction of the velocity...
We have investigated the impact of plasma-induced charging damage on the hot carrier reliability of n- and p-MOSFET's, including the examination of different stress bias regimes and the statistical distributions of hot carrier failure times. We found that when electron trapping determines hot carrier failure-as in p-MOSFETs stressed under the peak gate current condition-the median time-to-fail was...
The purpose of this paper is to study nMOS hot carrier reliability dependence on gate oxide thickness in 0.35 /spl mu/m devices. It is found that the gate oxide thickness effect in 0.35 /spl mu/m NMOS is primarily due to channel inversion charge difference and not due to smaller mobility degradation in thinner oxide as previously reported for 0.8 /spl mu/m NMOS.<<ETX>>
A simple method is proposed to quantitatively evaluate hot carrier reliability of a plasma-stressed PMOSFET using its characteristic degradation measured before forming gas annealing. This method is used to deduce a plasma-stress equivalent charging current. This plasma current increases with a decrease in gate oxide thickness. The hot carrier reliability of thinner oxides, however, is less influenced...
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