The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We investigated the overlay effect of TOW (tunnel oxide window) and TIM (tunneling implant) on the reliability of EEPROM product. Normally soft failure could be observed on the zero time state devices. The two key reliability indices for non-volatile memory are cycling and data retention. These reliability performances are impacted by the TIM/TOW overlay even with the more strict pre-screening method...
To ensure reliability of EEPROM devices, it is significant to monitor the evolution of the memory array threshold voltage (VT) distribution. In this work, impact of endurance and retention tests is evaluated on EEPROM VT distributions. To track accurately the evolution of the VT distribution, an innovative experimental plan is setup and experimental results are deeply analyzed.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.