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The oriented aluminum nitride (AlN) films on Si (100) substrates were prepared by reactive magnetron sputtering. It was found that with a low sputtering pressure, it has a high nucleation rate and the (001)-oriented grains are dominant in films. With a high sputtering pressure, the film is mainly consisted of the (100)- and (110)-oriented grains. In the images of atomic force microscopy, the grains...
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