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We demonstrate near-infrared waveguide photodetectors using Ge-SiGe quantum wells epitaxially grown on a silicon substrate. The diodes exhibit a low dark current of 17.9 mA/cm2 at 5-V reverse bias. The photodetectors are designed to work optimally at 1480 nm, where the external responsivity is 170 mA/W, which is mainly limited by the fiber-to-waveguide coupling loss. The 1480-nm wavelength matches...
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