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Lateral field emission transistors show promise for many high frequency and high power applications. Typical lateral devices place a gate roughly in between the cathode tip and the anode. While effective, such devices require large gate voltages for device control. This study proposes relocating the gate to on top of the semiconductor cathode stem, behind its emitting tip, allowing field effect control...
Summary form only given. Recent experiments at the University of Michigan have explored the mechanism of electron emission from triple points (vacuum-conductor-dielectric interface) for application to high current cathodes. Metal-oxide junction (MOJ) cathodes have been developed and tested; these consist of hafnium oxide (HfO2) or magnesium oxide (MgO) coatings over metal (#304 stainless steel) substrates...
Carbon nanotubes (CNTs) deposited by electrophoresis on a free-standing thin metal film edge are demonstrated. These CNTs act as electron field emitter which was integrated on the cathode of the field-emission vacuum diode. This diode exhibits a low reverse leakage current (<10-11) with high on-off ratio of 106. Owing to the low turn-on voltage of the nanosized CNTs, the field-emission diode exhibited...
Layers of non-directional carbon nanotubes (CNTs) are currently used as field emission (FE) cathodes. The main advantage for such cathodes is the low cost fabrication process using conventional film deposition techniques such as screen-printing or imprint. This advantage is unfortunately counter-balanced by the non-uniformity and low density of the field emission sites, a consequence of its mat-like...
Carbon cold cathodes are attractive for use in microwave tubes and many other applications due to their stability, low cost, and potential for high current operation in poor vacuum. Preliminary experiments have demonstrated current densities of 0.1-0.5 A/cm2 from emitters on flat substrates (silicon or molybdenum) having an area up to 1 cm2. However for microwave applications much greater current...
Triple junction of metal-dielectric-vacuum is theoretically analysed. Electric field enhancement is observed in the vicinity of a metal-dielectric contact and considered to be due to the presence of dielectric. The dielectric enhancement in the problem gives rise to a new concept that dielectric can enhance the electric field, which is opposite to the usual view that dielectric reduces the electric...
Fabrication techniques, field emission (FE) measurements, and cold cathode applications of carbon nanotube (CNT) and carbon nanofibers (CNF) are reviewed. Among the fabrication techniques discussed are screen printing and catalytic chemical vapour deposition. FE properties of single-wall (SWNT) and multiwall nanotubes (MWNT) are studied under SEM control. Optimization of various cold cathode materials...
A method of fabricating micrometre-sized field emission diodes is described. The devices use silicon field emitters that have been grown by selective epitaxy into 0.9 mu m sized contact holes in a 1 mu m thick field oxide. The anode of the device structure is a silicon wafer directly bonded to the field oxide.<<ETX>>
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