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Colloidal quantum dots (QDs) have been considered in the last years as a promising material for photodetectors due to size-tunable optical absorption spectra through quantum size effect. Another important advantage is solution processability that facilitates integration on a large variety of substrates, including silicon. This paper presents a hybrid PbS/silicon device prepared from solution-processed...
In the paper, we report a high photoexcited carrier multiplication photodetector operating at room temperature. The photodetector has double AlAs barriers in which a layer of InAs self-assembled quantum dots and thin quantum well is embedded in the center of the GaAs quantum well. Unlike previous AlGaAs QD-RTD, its shows high sensitivity to the weak light irradiation at low bias voltage and the operating...
A novel quantum effect photodetector array consisted of AlAs/GaAs/InGaAs/GaAs/InAs/ quantum-dots in quantum-well hybrid structure has been tested. It showed a wide response wavelength range from 400nm to 1000nm. The low threshold voltage (−0.8V) and the high responsibility (10A/W) at 77K made it a good choice for optical detection. A custom-made capacitor feedback transimpendance amplifier (CTIA)...
Photoelectric detection target (PDT) mainly was applied to gain the information of flying projectile in shooting range, however, the traditional PDT cannot satisfy current need, it exists detection view small and sensitivity low. To solve those questions, an improved design method was put forward. In this paper, rectangle linked photoelectric detector with low noise and high response was used to design...
In this work, we propose a concept of Single Electron Photo-detector (Photo-SET) able to detect one by one electron. This photo-SET consists of two blocs (reading and detection blocs) that operate simultaneously. From simulations results we determine the effects of photoexcitation on Id-Vg curves, and we present results obtained on the output photo-SET characteristics after variation of power illumination...
Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths lambda=1.55 mum, photoresponse as high as 2.0 A/W was measured.
In this study, the photocapacitive behavior of organic semiconductor, photosensitive material, poly-N-epoxypropylcarbazole (PEPC) doped with tetracyanoquinodimethane (TCNQ) and copper phthalocyanine (CuPc) were investigated. A sandwich type CG/PEPC-TCNQ/Al photocapacitive detector was fabricated by screen printing technology. Thin films of the copper phthalocyanine (CuPc) were deposited by vacuum...
We demonstrate the operation of a novel quantum dot, optically gated, field-effect transistor as a photon detector. The device is shown to exhibit single-photon sensitivity, a linear response, and an internal quantum efficiency of ~73 %.
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