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Good Ti/Al/Ni/Au ohmic contacts were achieved in AlGaN/GaN high electron mobility transistors (HEMTs) by using holes etching in an ohmic region. The ohmic contact with a contact resistance of 0.1 Ωmm was obtained. Compared with other methods which could reduce the ohmic-contact resistance, this method has simple process steps, low cost and can obtain stable device characteristics. The output characteristics...
This paper presents a preliminary study into stiction between parylene C and substrate surfaces for biocompatible check-valve applications. During fabrication, parylene C is used as the structural material for the check-valve. The substrate surfaces studied include Au, Al, Si, parylene C, XeF2 treated Si, and silicon dioxide. Stiction between different surfaces is created after sacrificial photoresist...
We have been developing a novel Wafer Level Packaging technology which has a possibility of lowering WLP cost drastically by applying some Jisso techniques to WLP manufacturing processes. In short, our idea is laminating a Cu wafer having Cu bumps to a Si wafer in which LSIs are formed with a nonconductive thermosetting resin. The process flow of the developed WLP technology is as follows; 1. Cu bump...
Evaluations and qualifications on ball attach process for bump packages, studies on solderability between lead to PCB on leaded packages, wire bond integrity evaluations, these are studies that involves thorough characterization on bonds and intermetallic compound (IMC) layers for different interfaces. For ball attach process in bumped packages, we focus on intermetallic formation between solder ball...
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