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Orientation dependence and asymmetry of VT (threshold voltage), gm (transconductance), S (subthreshold slope), and Ioff (off-state current at VG =3D 0 V) in 0.18 ??m n-MOSFETs were measured and analyzed. The test structure contains 8 different channel orientation angles of 0??/45??/90?? and three kinds of process conditions. Although VT, gm and S scarcely show particular anisotropy except for the...
Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO2 interface. These states are negatively charged when occupied (acceptor-like), and emit...
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