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It has been shown that the PIII/PLAD poly-Si gate doping process offers unique advantages over conventional beam line systems, including system simplification, lower cost, higher throughput, and device performance equivalence or improvement. PMOS devices fabricated by a B 2H6/H2 PIII/PLAD process on P+ poly-gate doping are intensively evaluated in this paper. In addition to higher throughput, PMOS...
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