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Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant...
SiC power semiconductors can safely operate at a junction temperature of 500degC. Such a high operating temperature range can substantially relax or completely eliminate the need for bulky and costly cooling components commonly used in silicon-based power electronic systems. However, a major limitation to fully realizing the potential of SiC and other wide band-gap semiconductor materials is the lack...
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