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A comprehensive evaluation of high-temperature (up to 200°C) on-state, blocking voltage and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip integrated Schottky rectifiers is presented in this paper. The SJTs feature current gains of 69 and on-resistance of 6.3 mΩ-cm2 at room-temperature. The integrated free-wheeling Schottky rectifier displays a 0.9 V knee voltage...
The paper will sketch ideas as well as experimental evidence how SiC devices should be designed in order to be ideal partners for modern silicon devices. After a short introduction into SiC power semiconductors, examples will be described. Based on the performance description of SiC diodes it will be shown like the use of such devices as freewheeling diodes can open up new horizons for dynamic performance...
Silicon carbide power devices are supposed to revolutionize certain parts of the power semiconductor business. After the successful product release of Schottky barrier diodes in 2001 and the development of a new generation of surge current stable diodes in 2005, the next logical step in the device chain should be a SiC switching device. Addressable are high voltage applications in energy systems as...
Silicon carbide power devices are supposed to revolutionize certain parts of the power semiconductor business. After the successful product release of Schottky barrier diodes in 2001 and the development of a new generation of surge current stable diodes in 2005, the next logical step in the device chain should be a SiC switching device. Addressable are high voltage applications in energy systems as...
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