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A thin films of crystalline Silicon Carbide (c-SiC) and amorphous Silicon Carbide (a-Si1-xCx) were grown onto p-type Si substrate by using a hot target p-type polycrystalline 6H-SiC target by both methods: Pulsed Laser Deposition (PLD) with KrF excimer laser and sputtering DC magnetron with a mixture of gas Ar:H2, respectively. The target ldquo6H-SiCrdquo used to elaborate the thin films, is realized...
High quality hydrogenated amorphous silicon (a-Si:H), germanium (a-Ge:H) and silicon-germanium (a-SiGe:H) thin films have been deposited by means of a d.c. hollow cathode system with magnetic field confinement. High purity single-crystal silicon and germanium nozzles were reactively sputtered in a high-density hollow cathode discharge of argon and hydrogen. This process avoids the use of the toxic...
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