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As advanced functionality is being demanded from distributed generation (DG) systems, smart inverters are being developed to provide reactive compensation to provide system support during grid disturbances. This compensation, however, leads to increased semiconductor device stress in the inverter. This work investigates the electro-thermal impacts of inverter grid support upon the longevity of SiC...
Recently, high-speed switching circuits using SiC and GaN power devices have been developed for next-generation power electronics circuits and applied to actual traction systems in Japan. Stray inductance caused by the wiring structures between dc capacitors and power devices is one of the most critical parameters that influences high-speed switching circuits. This paper presents a design procedure...
This paper presents the impact of voltage fall time of SiC MOSFETs, applied in converters of aerospace DC fed AC drives, on a HF conducted EMI signals. Simple frequency domain behavioral model is proposed for the use. Simulation results and real system measurements are successfully compared. It was shown that appropriate tuning of MOSFET voltage fall time by means of gate driver design allows to selectively...
This paper addresses a study of output voltage of a switched capacitor step down converter for a high voltage application. The proposed design is 3:4 Series to parallel switched capacitor converter based on capacitors and switches only. The Slow Switching Limit Impedance was theoretically calculated and proven. The Slow Switching Limit Impedance has an inverse relation with switching frequency and...
This paper demonstrates the performance of a 900 V silicon carbide (SiC) power MOSFET operating at 13.56 MHz in a 2 kW resonant inverter targeted for wireless power transfer (WPT) systems. Operating at multi-MHz switching frequency leads to smaller passive components and has the potential to improve power density and reduce weight for weight-sensitive applications. In addition, the advent of wide...
This paper shows a gate driver design for 1.7 kV SiC MOSFET module as well a Rogowski-coil based current sensor for effective shortcircuit protection. The design begins with the power architecture selection for better common-mode noise immunity as the driver is subjected to high dv/dt due to the very high switching speed of the SiC MOSFET modules. The selection of the most appropriate gate driver...
This paper extended the research on the system-level safe operation area (SSOA) of power electronic converters in our previous literatures, which proposed a comprehensive procedure of constructing SSOA, investigated the impact of the microscopic transient processes and macroscopic control algorithms, and pictured the SSOA of a battery charger for plug-in hybrid electric vehicles. The genetic algorithm...
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