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SiNx-doped Sb2Te3 films for nonvolatile memories were prepared by co-sputtering with Si3N4 and Sb2Te3 alloy targets. Electrical and structural properties were investigated and compared to those of conventional GST and pure Sb2Te3 film by annealing temperature-dependent resistivity measurement, x-ray diffraction (XRD). The resistivity ratio is larger than 105 during the phase transition, accompanied...
Fundamental material interactions as pertinent to nano-scale copper interconnects were studied for CVD Co with a variety of micro-analytical techniques. Native Co oxide grew rapidly within a few hours (XPS). Incorporation of oxygen and carbon in the CVD Co films (by AES and SIMS) depended on underlying materials, such as Ta, TaN, or Ru. Copper film texture (by XRD) and agglomeration resistance (by...
The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.
AuAl alloys prepared by thermal diffusion on p-type silicon (100) substrates were studied. Au/Al bilayers were prepared with 50%:50% as atomic concentration and 100 nm as total thickness. The formed Au/Al/Si systems were annealed from room temperature (RT) to 400??C in a vacuum oven with Argon atmosphere to form the AuAl alloys by thermal diffusion at different times (1, 2, 4 and 6 h). Prepared alloys...
Indium tin oxide (ITO) films were deposited via atmospheric-pressure plasma-enhanced chemical vapor deposition (APPD) using indium acetylacetonate, indium trifluoroacetylacetonate and tin trifluoroacetylacetonate as metal-organic precursors. A film growth temperature of 300??C gave highly-transparent films with modest conductivity. Post-deposition thermal treatments gave ITO films with resistivities...
In this paper the response of printed thick-film of WO3 doped by Y2O3 to organic solvent was studied. Different ratio of doping was prepared and changes of film resistance at different temperature in present of vaporized types of alcohol were observed. The results showed a high sensitivity of the film of 80.1%WO3-18.8%Y2O3 to Toluene, Xylene, Methanol, and 2-Propanone (Acetone) at 250, 450, and 550degC,...
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