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In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity...
ZnO is a wide band gap piezoelectric semiconductor material with large electromechanical coupling, which has great potential for photoelectronics devices, acoustooptic devices and SAW devices. In this paper, ZnO films were deposited on diamond substrates by RF magnetron sputtering, while the depositing and annealing parameters of ZnO film were optimized. High-purity (99.999%) ZnO target, O2 and Ar...
The surface acoustic waves (SAWs) propagating in interdigital transducer (IDT)/(100) aluminum nitride (AlN)/diamond possess the greater phase velocity and coupling coefficient than those in IDT/(002) AlN/diamond. In this study, the finite element method (FEM) is employed to calculate SAW characteristics in these two layered structures with different electric interfaces; i.e., IDT/AlN/diamond, AlN/IDT/diamond,...
In this paper we present recent results on fabrication of SAW devices on AlN/single-crystal diamond. The AlN thin film was deposited by sputtering technique, optimized to achieve an high degree of orientation value of the c-axis perpendicular to the plate surface (rocking curve FWHM ap 3.5deg), while the single-crystal diamond was grown by Microwave Plasma Chemical Vapor Deposition (MWPECVD) on High...
We have developed a diamond SAW resonator capable of over 3 GHz using a SiO2/IDT/AlN/diamond structure. The structure enables a thicker Al-IDT and a lower series resistance for the SAW resonator based on FEM calculation results. These attributes lead to low insertion loss for SAW devices over 3 GHz compared to SiO2/IDT/ZnO/diamond structures. A 2port 6.4 GHz resonator was fabricated and has successfully...
In this work, we report on the fabrication results of surface acoustic wave (SAW) devices operating at frequencies up to 8 GHz. In previous work, we have shown that high acoustic velocities (9 to 12 km/s) are obtained from the layered AIN/diamond structure. The interdigital transducers (IDT) made of aluminum with resolutions up to 250 nm were successfully patterned on AIN/diamond-layered structures...
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