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This paper reports simple and novel in-parallel fabrication processes of devices based in nanowires which avoid photolithography to pattern metallic electrodes. The wafer-level approaches allow low-risk device metallization of grown or deposited nanowire devices by selectively depositing evaporated metal on nanowire wafers. A silicon microstencil is thus used as hard mask defining the electrode regions...
GaN optoelectronic devices based on nanowires offer potential advantages that merit further investigation for applications in solid-state lighting and displays. Reported is the operation GaN nanowire, light-emitting diodes that are based on a uniform and scalable nanowire process. For light-emitting diodes consisting of approximately 300 nanowire pn homojunctions, operating in parallel, the electroluminescence...
The authors report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport,...
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