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Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core–shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of InxGa1−xN/GaN MQWs. The MQWs on three different crystal facets (c-, m-, and semipolar-plane) of GaN nanowire...
Submicron beam synchrotron-based X-ray diffraction (XRD) techniques have been developed and used to accurately and nondestructively map chemical composition and material quality of selectively grown group III-nitride nanowires. GaN, AlGaN, and InGaN multi-quantum-well nanowires have been selectively grown on lattice matched and mismatched substrates, and the challenges associated with obtaining and...
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