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To create a nickel monosilicide (NiSi) film with superior electrical properties, two-step rapid thermal annealing (RTA) was optimized. Using in-situ chemical dry cleaning and increasing initial RTA temperature makes it possible to macroscopically transform nickel into NiSi without causing oxygen-contamination problems. Nevertheless, the Ni2Si remaining on the top surface of the NiSi degrades its electrical...
To create a nickel-monosilicide (NiSi) film with superior electrical properties, two-step rapid thermal annealing (RTA) was optimized. Using in situ chemical dry cleaning and increasing initial RTA temperature makes it possible to macroscopically transform nickel into NiSi without causing oxygen contamination. Nevertheless, di-nickel silicide (Ni2Si) remaining on the top surface of NiSi on p+-doped...
NiSi is a promising material on salicide process. However, the thermal stability of NiSi is still a significant problem. Degradation in sheet resistance of Ni suicide is originated from phase transition from NiSi to NiSi2 and/or agglomeration of the suicide layers. We noticed the phenomenon that the sheet resistance increased irregularly at the temperature region for the phase transition, that is,...
Nitrogen ion implantation (N2 I.I.) prior to Ni film deposition successfully suppresses the agglomeration of nickel silicide (NiSi) formed on arsenic doped silicon substrate in NMOS region, and drastically improves the thermal stability of its resistivity at narrow lines. Using this technique, lower sheet resistance of NiSi narrow line can be kept at high annealing temperature of 650degC for 30 sec...
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